Strain and Defects Depth Distributions in Undoped and Boron-Doped Si1−Xgex Layers Grown by Solid Phase Epitaxy

AuthID
 P-011-MPZ
6
Author(s)
Rodríguez, A
·
Rodríguez, T
·
Soares, JC
·
da Silva, MF
·
Ballesteros, C
Tipo de Documento
Article
Year published
1997
Publicado
in Journal of Applied Physics, ISSN: 0021-8979
Volume: 82, Número: 6, Páginas: 2887-2895
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Source Identifiers
ISSN: 0021-8979
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