Doping Efficiency in Freestanding Silicon Nanocrystals from the Gas Phase: Phosphorus Incorporation and Defect-Induced Compensation

AuthID
 P-003-FK2
7
Author(s)
Stegner, AR
·
Klein, K
·
Wiggers, H
·
Stutzmann, M
·
Brandt, MS
Tipo de Documento
Article
Year published
2009
Publicado
in PHYSICAL REVIEW B, ISSN: 1098-0121
Volume: 80, Número: 16
Indexing
Wos®
Scopus®
Crossref®86
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-72849123428
Wos: WOS:000271352100101
Source Identifiers
ISSN: 1098-0121
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