High Near-Infrared Transparency and Carrier Mobility of Mo Doped In2O3 Thin Films for Optoelectronics Applications

AuthID
 P-003-FS2
5
Author(s)
Elangovan, E
·
Ramamurthi, K
·
Tipo de Documento
Article
Year published
2009
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 106, Número: 6, Páginas: 063716 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-70349640168
Wos: WOS:000270378100083
Source Identifiers
ISSN: 0021-8979
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