Low-Current Blocking Temperature Writing of Double Barrier Magnetic Random Access Memory Cells

AuthID
 P-000-BMV
2
Author(s)
Wang, JG
·
Tipo de Documento
Article
Year published
2004
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 84, Número: 6, Páginas: 945-947 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-1542276813
Wos: WOS:000188763800037
Source Identifiers
ISSN: 0003-6951
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