Hfo2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

AuthID
 P-014-YYK
20
Author(s)
Schaeffer, J
·
Edwards, NV
·
Liu, R
·
Roan, D
·
Hradsky, B
·
Gregory, R
·
Kulik, J
·
Duda, E
·
Contreras, L
·
Christiansen, J
·
Zollner, S
·
Tobin, P
·
Nguyen, BY
·
Nieh, R
·
Ramon, M
·
Rao, R
·
Hegde, R
·
Baker, J
·
Voight, S
Tipo de Documento
Article
Year published
2003
Publicado
in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN: 0013-4651
Volume: 150, Número: 4, Páginas: F67-F74 (8)
Indexing
Wos®
Crossref®56
Google Scholar®
Publication Identifiers
Wos: WOS:000181515100055
Source Identifiers
ISSN: 0013-4651
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