Enhancement of 2Deg Effective Mass in Aln/Al0.78Ga0.22N High Electron Mobility Transistor Structure Determined by Thz Optical Hall Effect

AuthID
 P-015-8Z3
8
Author(s)
Kühne, P
·
Armakavicius, N
·
Papamichail, A
·
Tran, DQ
·
Schubert, M
·
Paskov, PP
·
Darakchieva, V
Tipo de Documento
Article
Year published
2022
Publicado
in Applied Physics Letters, ISSN: 0003-6951
Volume: 120, Número: 25
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Source Identifiers
ISSN: 0003-6951
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