Low Al-Content N-Type AlXGa1−XN Layers with a High-Electron-Mobility Grown by Hot-Wall Metalorganic Chemical Vapor Deposition

AuthID
 P-015-8Z5
7
Author(s)
Armakavicius, N
·
Gogova, D
·
Nawaz, M
·
Rorsman, N
·
Paskov, PP
·
Darakchieva, V
Tipo de Documento
Article
Year published
2023
Publicado
in Vacuum, ISSN: 0042-207X
Volume: 217, Páginas: 112481
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Source Identifiers
ISSN: 0042-207X
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