High Crystalline Quality Homoepitaxial Si-Doped Β-Ga2O3(010) Layers with Reduced Structural Anisotropy Grown by Hot-Wall Mocvd

AuthID
 P-015-8ZA
9
Author(s)
Gogova, D
·
Tran, DQ
·
Jokubavicius, V
·
Vines, L
·
Schubert, M
·
Yakimova, R
·
Paskov, PP
·
Darakchieva, V
Tipo de Documento
Article
Year published
2024
Publicado
in Journal of Vacuum Science & Technology A, ISSN: 0734-2101
Volume: 42, Número: 2
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Source Identifiers
ISSN: 0734-2101
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