Mis Photodiodes of Polyrnorphous Silicon Deposited at Higher Growth Rates by 27.12 Mhz Pecvd Discharge

AuthID
 P-000-C1J
5
Author(s)
4
Editor(es)
Martins, R; Fortunato, E; Ferreira, I; Dias, C
Tipo de Documento
Article
Year published
2004
Publicado
in ADVANCED MATERIALS FORUM II in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 455-456, Páginas: 73-76 (4)
Conference
2Nd International Materials Symposium, Date: APR 14-16, 2003, Location: Caparica, PORTUGAL, Patrocinadores: Portuguese Mat Soc, Portuguese Sci Fdn, Calouste Gulbenkian Fdn, Luso Amer Fdn, Host: New Univ Lisbon, Fac Sci & Technol
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Wos®
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-3142771246
Wos: WOS:000222018500015
Source Identifiers
ISSN: 0255-5476
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