Photoluminescence and Raman Study of a Tensilely Strained Si Type-Ii Quantum Well on a Relaxed Sige Graded Buffer

AuthID
P-003-S4A
1
Editor(es)
Notzel, R
Tipo de Documento
Proceedings Paper
Year published
2009
Publicado
in SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING) in IOP Conference Series-Materials Science and Engineering, ISSN: 1757-8981
Volume: 6, Páginas: 012023 (4)
Conference
Symposium K on Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications Ii at the E-Mrs Spring Meeting, Date: JUN 08-12, 2009, Location: Strasbourg, FRANCE, Patrocinadores: E-MRS
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84893440370
Wos: WOS:000315413800023
Source Identifiers
ISSN: 1757-8981
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