Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

AuthID
 P-004-689
9
Author(s)
Nilsson, J
·
Guinea, F
·
Castro Neto, AH
Tipo de Documento
Article
Year published
2007
Publicado
in PHYSICAL REVIEW LETTERS, ISSN: 0031-9007
Volume: 99, Número: 21
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Wos®
Scopus®
Crossref®1645
Pubmed®
Google Scholar®
Publication Identifiers
Pubmed: 18233240
SCOPUS: 2-s2.0-36249007086
Wos: WOS:000251107500045
Source Identifiers
ISSN: 0031-9007
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