Photoluminescence Decay in the Ps Time Regime and Structural Properties of Pulsed-Laser Deposited Gan

AuthID
 P-000-E1R
8
Author(s)
1
Editor(es)
Bonde Nielsen K.Nylandsted Larsen A.Weyer G.
Tipo de Documento
Article
Year published
2003
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 340, Páginas: 457-461 (5)
Conference
22Nd International Conference on Defects in Semiconductors (Icds-22), Date: JUL 28-AUG 01, 2003, Location: AARHUS, DENMARK, Host: UNIV AARHUS
Indexing
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-0346686017
Wos: WOS:000188300200091
Source Identifiers
ISSN: 0921-4526
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