Thermal Dehydrogenation of Amorphous Silicon Deposited on C-Si: Effect of the Substrate Temperature During Deposition

AuthID
P-005-444
4
Author(s)
de Calheiros Velozo, AD
·
4
Editor(es)
Pizzini, S; Kissinger, G; YamadaKaneta, H; Kang, J
Tipo de Documento
Proceedings Paper
Year published
2012
Publicado
in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351
Volume: 9, Número: 10-11, Páginas: 2198-2202 (5)
Conference
Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications Iii / Spring Meeting of the European-Materials-Reseach-Society (E-Mrs), Date: MAY 14-18, 2012, Location: Strasbourg, FRANCE, Patrocinadores: European Mat Res Soc (E-MRS)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84867933771
Wos: WOS:000314688000073
Source Identifiers
ISSN: 1862-6351
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