Ion-Beam Deposited Low Resistance Magnetic Tunnel Junctions Prepared by a Two-Step Oxidation Process

AuthID
 P-000-GN5
3
Author(s)
Zhang, ZG
·
Zhang, ZZ
·
Tipo de Documento
Article
Year published
2003
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 93, Número: 10, Páginas: 8552-8554 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-0038581913
Wos: WOS:000182822600300
Source Identifiers
ISSN: 0021-8979
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