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Design of High-Voltage Devices in a Fully Implanted Twin-Well Cmos Process

AuthID
P-000-JJS

Author(s)

Santos, PM

Quaresma, H

Silva, AP

Lanca, M

Editor(es)

Franca, J; Freitas, P

Tipo de Documento

Proceedings Paper

Year published

2003

Publicado

in ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ISSN: 1930-8876

Páginas: 343-346 (4)

Conference

33Rd European Solid-State Device Research Conference, Date: SEP 16-18, 2003, Location: ESTORIL, PORTUGAL, Patrocinadores: Chipidea Microelect, Inst Super Tech, IEEE, EDS, Infineon Technologies, ATMEL, Tower Semiconduct Ltd

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Publication Identifiers

DOI: 10.1109/essderc.2003.1256884

SCOPUS: 2-s2.0-84907683124

Wos: WOS:000189004800083

Source Identifiers

ISSN: 1930-8876

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Design of High-Voltage Devices in a Fully Implanted Twin-Well Cmos Process

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Design of High-Voltage Devices in a Fully Implanted Twin-Well Cmos Process

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