Post-Deposition Annealing Influenced Structural and Electrical Properties of Al/Tio2/Si Gate Capacitors

AuthID
P-006-6S4
5
Author(s)
Tipo de Documento
Article
Year published
2013
Publicado
in SUPERLATTICES AND MICROSTRUCTURES, ISSN: 0749-6036
Volume: 62, Páginas: 68-80 (13)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84881513841
Wos: WOS:000325588700008
Source Identifiers
ISSN: 0749-6036
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