P/N Junction Depth Control Using Amorphous Silicon as a Low Temperature Dopant Source

AuthID
 P-006-77K
4
Author(s)
de Calheiros Velozo, AD
·
Tipo de Documento
Article
Year published
2013
Publicado
in THIN SOLID FILMS, ISSN: 0040-6090
Volume: 543, Páginas: 122-124 (3)
Conference
4Th International Conference on Nanostructures Self-Assembly (Nanosea), Date: JUN 25-29, 2012, Location: ITALY, Patrocinadores: Univ Roma Tor Vergata, Im2np, European Off Aerosp Res & Dev, Consiglio Nazl Ric, Queensland Univ Technol, Solar Powered Nano Sensors, FEI, 5Pascal, CNISM, Vacuum Sci, Orsay Phys, Omicron, Ctr Nationale Rech Sci, Consorzio Nazl Interuniversitario Sci Fisiche Materia, Queensland Univ Technol
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Publication Identifiers
SCOPUS: 2-s2.0-84883156644
Wos: WOS:000324049500028
Source Identifiers
ISSN: 0040-6090
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