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Influence of Rf-Sputtering Power on Formation of Vertically Stacked Si1-Xgex Nanocrystals Between Ultra-Thin Amorphous Al2O3 Layers: Structural and Photoluminescence Properties

AuthID
P-006-780

Author(s)

Vieira, EMF

Martin Sanchez, J

Roldan, MA

Varela, M

Buljan, M

Bernstorff, S

Pennycook, SJ

Molina, SI

Alves, E

Chahboun, A

Gomes, MJM

Tipo de Documento

Article

Year published

2013

Publicado

in JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN: 0022-3727

Volume: 46, Número: 38, Páginas: 385301 (10)

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Publication Identifiers

DOI: 10.1088/0022-3727/46/38/385301

Handle: https://hdl.handle.net/1822/27466

SCOPUS: 2-s2.0-84885099900

Wos: WOS:000324099000011

Source Identifiers

ISSN: 0022-3727

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Influence of Rf-Sputtering Power on Formation of Vertically Stacked Si1-Xgex Nanocrystals Between Ultra-Thin Amorphous Al2O3 Layers: Structural and Photoluminescence Properties

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Influence of Rf-Sputtering Power on Formation of Vertically Stacked Si1-Xgex Nanocrystals Between Ultra-Thin Amorphous Al2O3 Layers: Structural and Photoluminescence Properties

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