Influence of N(+) and P(+) Doping on the Lattice Sites of Implanted Fe in Si

AuthID
 P-006-7AZ
4
Author(s)
Tipo de Documento
Article
Year published
2013
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 114, Número: 10, Páginas: 103503 (9)
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Publication Identifiers
SCOPUS: 2-s2.0-84884911581
Wos: WOS:000324495600012
Source Identifiers
ISSN: 0021-8979
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