Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation

AuthID
 P-007-9VM
9
Author(s)
Subrahmanyam, VS
·
Lopes Gil, C
·
De Lima, AP
2
Editor(es)
JCohen,J;RHanna,J
Tipo de Documento
Proceedings Paper
Year published
2001
Publicado
in Materials Research Society Symposium - Proceedings, ISSN: 0272-9172
Volume: 664, Páginas: A2251-A2256
Conference
Amorphous and Heterogeneous Silicon Based Films 2001, Date: 16 April 2001 through 20 April 2001, Location: San Francisco, CA
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Publication Identifiers
SCOPUS: 2-s2.0-0035558247
Source Identifiers
ISSN: 0272-9172
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