Annealing Kinetics Of A-Si-H Deposited By Concentric-Electrode Rf Glow-Discharge At Room-Temperature

AuthID
 P-007-BY7
8
Author(s)
CHAN, KK
·
BLUM, JM
·
ARIENZO, M
·
MONTEIRO, PA
·
WYRSH, N
Tipo de Documento
Article
Year published
1993
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 73, Número: 4, Páginas: 1826-1831 (6)
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Publication Identifiers
SCOPUS: 2-s2.0-0347908077
Wos: WOS:A1993KM23300038
Source Identifiers
ISSN: 0021-8979
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