Publicações

Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

AuthID
P-007-SDR

Author(s)

Pantelides, ST

Tsetseris, L

Beck, MJ

Rashkeev, SN

Hadjisavvas, G

Batyrev, I

Tuttle, B

Marinopoulos, AG

Zhou, XJ

Fleetwood, DM

Schrimpf, RD

Editor(es)

Sah,RE;Deen,JM;Toriumi,A;Zhang,J;Yota,J

Tipo de Documento

Proceedings Paper

Year published

2009

Publicado

in SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10 in ECS Transactions, ISSN: 1938-5862

Volume: 19, Número: 2, Páginas: 319-+ (7)

Conference

Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics Held at the 215Th Ecs Meeting, Date: MAY 24-29, 2009, Location: San Francisco, CA, Patrocinadores: Electrochem Soc

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Fontes

Publication Identifiers

DOI: 10.1149/1.3122099

SCOPUS: 2-s2.0-76549122967

Wos: WOS:000273338000017

Source Identifiers

ISSN: 1938-5862

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Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

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Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

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