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Using X-Parameters to Model Diode-Based Rf Power Probes

AuthID
P-008-00T

Author(s)

Boaventura, AS

Testera, AR

Carvalho, NB

Barciela, MF

Tipo de Documento

Proceedings Paper

Year published

2011

Publicado

in IEEE MTT-S International Microwave Symposium Digest, ISSN: 0149-645X

Conference

2011 Ieee Mtt-S International Microwave Symposium, Ims 2011, Date: 5 June 2011 through 10 June 2011, Location: Baltimore, MD, Patrocinadores: Agilent Technologies;NXP Semiconductors;RFMD;ANSYS, Inc.;CST of America, Inc.

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Publication Identifiers

DOI: 10.1109/mwsym.2011.5972900

SCOPUS: 2-s2.0-80052306497

Source Identifiers

ISSN: 0149-645X

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Using X-Parameters to Model Diode-Based Rf Power Probes

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