Spectroscopic Ellipsometry Study of the Layer Structure and Impurity Content in Er-Doped Nanocrystalline Silicon Thin Films

AuthID
 P-000-SMX
7
Author(s)
Losurdo, M
·
Stepikhova, MV
·
Pinto, P
·
Tipo de Documento
Article
Year published
2001
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 308, Páginas: 374-377 (4)
Conference
21St International Conference on Defects in Semiconductors, Date: JUL 16-20, 2001, Location: GIESSEN, GERMANY
Indexing
Wos®
Scopus®
Crossref®3
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Publication Identifiers
SCOPUS: 2-s2.0-0141914916
Wos: WOS:000173660100094
Source Identifiers
ISSN: 0921-4526
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