Indium Distribution Within Inxga1-Xn Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study

AuthID
 P-000-SYX
7
Author(s)
Gleize, J
·
Frandon, J
·
Renucci, MA
Tipo de Documento
Article
Year published
2001
Publicado
in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, ISSN: 0370-1972
Volume: 228, Número: 1, Páginas: 173-177 (5)
Conference
4Th International Conference on Nitride Semiconductors (Icns-4), Date: JUL 16-20, 2001, Location: DENVER, COLORADO
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Publication Identifiers
SCOPUS: 2-s2.0-0035541083
Wos: WOS:000172513100040
Source Identifiers
ISSN: 0370-1972
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