Admittance Frequency Dependence of Schottky Barriers Formed on Dc Triode Sputtered Amorphous Silicon: Hydrogen Influence on Deep Gap State Characteristics

AuthID
 P-008-RJ0
3
Author(s)
Mencaraglia, D
·
Kleider, JP
Tipo de Documento
Article
Year published
1985
Publicado
in Journal of Applied Physics, ISSN: 0021-8979
Volume: 58, Número: 3, Páginas: 1292-1301
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Publication Identifiers
SCOPUS: 2-s2.0-0000136444
Source Identifiers
ISSN: 0021-8979
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