Publicações

A-Si-H Ambipolar Diffusion Length And Effective Lifetime Measured By Flying Spot Technique (Fst)

AuthID
P-008-TZ9

Author(s)

VIEIRA, M

MARTINS, R

FORTUNATO, E

SOARES, F

GUIMARAES, L

Editor(es)

MADAN, A; HAMAKAWA, Y; THOMPSON, MJ; TAYLOR, PC; LECOMBER, PG

Tipo de Documento

Proceedings Paper

Year published

1991

Publicado

in AMORPHOUS SILICON TECHNOLOGY - 1991 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume: 219, Páginas: 863-868 (6)

Conference

Symp At The 1991 Spring Meeting Of The Materials Research Soc : Amorphous Silicon Technology, Date: APR 30-MAY 01, 1991, Location: ANAHEIM, CA, Patrocinadores: MAT RES SOC

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Publication Identifiers

DOI: 10.1557/proc-219-863

Wos: WOS:A1991BU93V00130

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A-Si-H Ambipolar Diffusion Length And Effective Lifetime Measured By Flying Spot Technique (Fst)

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