The Influence of Oxygen on the Lattice Sites of Rare Earths in Silicon

AuthID
P-008-X9Y
4
Author(s)
Vantomme, A
·
Langouche, G
·
Tipo de Documento
Article
Year published
1998
Publicado
in JOURNAL OF LUMINESCENCE, ISSN: 0022-2313
Volume: 80, Número: 1-4, Páginas: 303-307 (5)
Conference
Symposium on Light Emission from Silicon - Procress Towards Si-Based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society, Date: JUN 16-19, 1998, Location: STRASBOURG, FRANCE, Patrocinadores: DCA Instruments, High Voltage Engn Europa BV, CNR IMETEM Catania, GNSM-CNR Roma
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0000575637
Wos: WOS:000079227800052
Source Identifiers
ISSN: 0022-2313
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