Acceptor-Hydrogen Interaction in Inas

AuthID
P-008-X9Z
7
Author(s)
Burchard, A
·
Deicher, M
·
Forkel Wirth, D
·
Magerle, R
·
Prospero, A
·
Stotzler, A
1
Group Author(s)
ISOLDE Collaboration
2
Editor(es)
Davies, G; Nazare, MH
Tipo de Documento
Article
Year published
1997
Publicado
in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 258-2, Número: PART 2, Páginas: 1223-1228 (6)
Conference
19Th International Conference on Defects in Semiconductors (Icds-19), Date: JUL, 1997, Location: AVEIRO, PORTUGAL, Patrocinadores: European Union DG XII Sci Res & Dev, Fundacao Calouste Gulbenkian, Junta Nacl Investigacio Cient & Tecnol, USA Res Off, Trans Tech Publicat Ltd, USN Off Naval Res Grant
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0031376380
Wos: WOS:000072749500200
Source Identifiers
ISSN: 0255-5476
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