Lattice Sites and Damage Annealing of Implanted Tm and Er in Si

AuthID
P-008-XA0
7
Author(s)
De Wachter, J
·
Langouche, G
·
Moons, R
·
Vantomme, A
1
Group Author(s)
ISOLDE Collaboration
4
Editor(es)
delaRubia,TD;Coffa,S;Stolk,PA;Rafferty,CS
Tipo de Documento
Proceedings Paper
Year published
1997
Publicado
in DEFECTS AND DIFFUSION IN SILICON PROCESSING in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 469, Páginas: 407-412 (6)
Conference
Symposium on Defects and Diffusion in Silicon Processing, Date: APR 01-04, 1997, Location: SAN FRANCISCO, CA, Patrocinadores: Mat Res Soc, Bell Labs, Lucent Technol, CNR, Lawrence Livermore Natl Lab, Philips Res Labs, SEMATECH, SGS Thomson Microelectr, Technol Modelling Associates
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0031339185
Wos: WOS:000071462300056
Source Identifiers
ISSN: 0272-9172
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