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A-Si-H,F-Reversible-A-Si,Ge-H,F Graded-Bandgap Structures

AuthID
P-008-XN0

Author(s)

CONDE, JP

SHEN, DS

CHU, V

WAGNER, S

Tipo de Documento

Article

Year published

1989

Publicado

in IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN: 0018-9383

Volume: 36, Número: 12, Páginas: 2834-2838 (5)

Conference

International Topical Conf on Hydrogenated Amorphous Silicon Devices and Technology, Date: OCT, 1988, Location: YORKTOWN, NY, Host: IBM THOMAS J WATSON RES CTR

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Publication Identifiers

DOI: 10.1109/16.40968

SCOPUS: 2-s2.0-0024908308

Wos: WOS:A1989CH52800016

Source Identifiers

ISSN: 0018-9383

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A-Si-H,F-Reversible-A-Si,Ge-H,F Graded-Bandgap Structures

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