Determination Of The Do/- Level In Amorphous Si,Ge-H(F) By Time-Of-Flight Charge Collection

AuthID
 P-008-XN7
8
Author(s)
SHEN, DS
·
LIU, JZ
·
ALJISHI, S
·
SMITH, ZE
·
MARUYAMA, A
·
WAGNER, S
Tipo de Documento
Article
Year published
1988
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 53, Número: 16, Páginas: 1542-1544 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-5244295663
Wos: WOS:A1988Q434600029
Source Identifiers
ISSN: 0003-6951
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