Electron Collection Efficiency Of A-Si,Ge:h,F At 300K To 400K.

AuthID
 P-008-XNB
7
Author(s)
Shen, DS
·
Aljishi, S
·
Smith, ZE
·
Kolodzey, J
·
Wagner, S
Tipo de Documento
Proceedings Paper
Year published
1987
Publicado
in Conference Record of the IEEE Photovoltaic Specialists Conference, ISSN: 0160-8371
Páginas: 884-888
Conference
Conference Record of the Nineteenth Ieee Photovoltaic Specialists Conference - 1987., Location: New Orleans, LA, USA, Patrocinadores: IEEE, New York, NY, USA
Indexing
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0023564242
Source Identifiers
ISSN: 0160-8371
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