Lattice Location and Thermal Stability of Implanted Nickel in Silicon Studied by On-Line Emission Channeling

AuthID
 P-008-Z07
8
Author(s)
da Silva, MR
·
Bosne, E
·
Tipo de Documento
Article
Year published
2014
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 115, Número: 2, Páginas: 023504 (9)
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Publication Identifiers
SCOPUS: 2-s2.0-84892417586
Wos: WOS:000329922700016
Source Identifiers
ISSN: 0021-8979
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