Rbs/Simulated Annealing Analysis of Buried Sicox Layers Formed by Implantation of O into Cubic Silicon Carbide

AuthID
 P-009-2V7
3
Author(s)
Jackson, SM
Tipo de Documento
Article
Year published
1998
Publicado
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 136, Páginas: 1168-1171 (4)
Conference
13Th International Conference on Ion Beam Analysis (Iba-13), Date: JUL 27-AUG 01, 1997, Location: LISBON, PORTUGAL
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Publication Identifiers
SCOPUS: 2-s2.0-0032019601
Wos: WOS:000074380400209
Source Identifiers
ISSN: 0168-583X
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