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Residual Post Anneal Damage of Ge and C Co-Implantation of Si Determined by Quantitative Rbs-Channelling

AuthID
P-009-2VA

Author(s)

Nejim, A

Barradas, NP

Jeynes, C

Cristiano, F

Wendler, E

Gartner, K

Sealy, BJ

Tipo de Documento

Article

Year published

1998

Publicado

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 139, Número: 1-4, Páginas: 244-248 (5)

Conference

5Th European Conference on Accelerators in Applied Research and Technology (Ecaart5), Date: AUG 26-30, 1997, Location: EINDHOVEN, NETHERLANDS, Host: EINDHOVEN UNIV

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Fontes

Publication Identifiers

DOI: 10.1016/s0168-583x(97)00966-x

SCOPUS: 2-s2.0-0032045114

Wos: WOS:000074586200037

Source Identifiers

ISSN: 0168-583X

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Residual Post Anneal Damage of Ge and C Co-Implantation of Si Determined by Quantitative Rbs-Channelling

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Residual Post Anneal Damage of Ge and C Co-Implantation of Si Determined by Quantitative Rbs-Channelling

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