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Defect-Related Photoluminescence from Sio 2 Thin Films by Si-Ge Ions Doped

AuthID
P-009-FSK

Author(s)

Zhong, K

Xia, YD

Miao, JH

Fu, J

Tipo de Documento

Proceedings Paper

Year published

2011

Publicado

in Advanced Materials Research, ISSN: 1022-6680

Volume: 328-330, Páginas: 1153-1156

Conference

2011 International Conference on Mechatronics and Materials Processing, Icmmp 2011, Date: 18 November 2011 through 20 November 2011, Location: Guangzhou, Patrocinadores: Guangzhou University

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Fontes

Publication Identifiers

DOI: 10.4028/www.scientific.net/amr.328-330.1153

SCOPUS: 2-s2.0-80053114781

Source Identifiers

ISSN: 1022-6680

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Defect-Related Photoluminescence from Sio 2 Thin Films by Si-Ge Ions Doped

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