The Use of Bismuth(Iii) Dithiocarbamato Complexes as Precursors for the Low-Pressure Mocvd of Bi2S3

AuthID
 P-000-YSW
4
Author(s)
Park, JH
·
O'Brien, P
Tipo de Documento
Article
Year published
2000
Publicado
in CHEMICAL VAPOR DEPOSITION, ISSN: 0948-1907
Volume: 6, Número: 5, Páginas: 230-+ (4)
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Publication Identifiers
SCOPUS: 2-s2.0-0001214895
Wos: WOS:000089889400008
Source Identifiers
ISSN: 0948-1907
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