Study of the Crystalline Quality of Exfoliated Surfaces in Hydrogen-Implanted Silicon

AuthID
 P-000-ZHE
4
Author(s)
Hoechbauer, T
·
Nastasi, M
Tipo de Documento
Article
Year published
2000
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 77, Número: 2, Páginas: 268-270 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-0001521337
Wos: WOS:000087914100038
Source Identifiers
ISSN: 0003-6951
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