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Influence of the Doping on the Lattice Sites of Fe in Si

AuthID
P-009-W4Y

Author(s)

Silva, DJ

Wahl, U

Correia, JG

Araujo, JP

Editor(es)

Cavallini,A;Estreicher,SK

Tipo de Documento

Proceedings Paper

Year published

2014

Publicado

in INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 in AIP Conference Proceedings, ISSN: 0094-243X

Volume: 1583, Páginas: 24-27 (4)

Conference

27Th International Conference on Defects in Semiconductors (Icds), Date: JUL 21-26, 2013, Location: Bologna, ITALY, Patrocinadores: Fraunhofer Inst Solar Energy, Univ Bologna, Dept Phys & Astron, Enrico Fermi Ctr

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Publication Identifiers

DOI: 10.1063/1.4865597

SCOPUS: 2-s2.0-85026288712

Wos: WOS:000342321600005

Source Identifiers

ISSN: 0094-243X

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Influence of the Doping on the Lattice Sites of Fe in Si

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Influence of the Doping on the Lattice Sites of Fe in Si

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