Influence of Oxygen Ion Implantation on the Damage and Annealing Kinetics of Iron-Implanted Sapphire

AuthID
P-001-08J
5
Author(s)
da Silva, MF
·
Tipo de Documento
Article
Year published
2000
Publicado
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 166, Páginas: 188-192 (5)
Conference
10Th International Conference on Radioation Effects in Insulators (Rei-10), Date: JUL 18-23, 1999, Location: JENA, GERMANY, Patrocinadores: Deutsch Forsch Gemeinsch, Friedrich Schiller Univ Jena, Thruinger Minist Wissensch, Forsch & Kultur, Elsevier Sci BV, Amsterdam, High Voltage Engn Europa BV, Amersfoort, Carl Zeiss Jena GmbH, Jena, Jenoptik AG, Jena, Layertec GmbH, Mellingen, VACOM GmbH, Jena, JENION, Jena, PINK GmbH, Wertheim
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0033738697
Wos: WOS:000087422200032
Source Identifiers
ISSN: 0168-583X
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