Two Step Process for the Growth of a Thin Layer of Silicon Dioxide for Tunnelling Effect Applications

AuthID
P-001-263
6
Author(s)
Cabrita, A
·
Tonello, P
·
Nunes, P
·
5
Editor(es)
Yeadon, M; Chiang, S; Farrow, RFC; Evans, JW; Auciello, O
Tipo de Documento
Proceedings Paper
Year published
2000
Publicado
in RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY-THEORY AND EXPERIMENT in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 619, Páginas: 179-184 (4)
Conference
Symposium on Recent Developments in Oxide and Metal Epitaxy-Theory and Experiment, Date: APR 23-26, 2000, Location: SAN FRANCISCO, CA, Patrocinadores: US DOE, Ames Lab, US DOE Basic Engery Sci, Argonne Natl Lab, Mat Sci Div, IBM Almaden Res Ctr, Inst Mat Res & Engn
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0034447391
Wos: WOS:000168247300023
Source Identifiers
ISSN: 0272-9172
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