Publicações

A Comparative Study of N-P Gan/Sic Heterojunction and P-N 6H-Sic Homojunction Diodes

AuthID
P-001-27J

Author(s)

Vacas, J

Lahreche, H

Monteiro, T

Gaspar, C

Pereira, E

Brylinski, C

di Forte Poisson, MA

Editor(es)

Carter, CH; Devaty, RP; Rohrer, GS

Tipo de Documento

Article

Year published

2000

Publicado

in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476

Volume: 338-3, Páginas: 1651-1654 (4)

Conference

International Conference on Silicon Carbide and Related Materials, Date: OCT 10-15, 1999, Location: RES TRIANGLE PK, NORTH CAROLINA, Patrocinadores: NASA, Glenn Res Ctr, USAF, Res Lab, mat & Mfg Directoirate, USN, Off Res, Def Res & Engn, Cree Inc, Charles & Colvard Inc, ABB Semicond, Sterling Semicond Inc, ATMI Inc, Epigress AB, Aixtron AG, Northrop Grumman, Siemens AG, EMCORE Inc, GE, Corp R & D, Litton Airton, II-VI Inc

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