Preparation and Ferroelectric Properties of Graded Pb(Tixzr1-X)O-3 Thin Films

AuthID
 P-001-2DA
4
Author(s)
Matei, I
·
Pintilie, I
Tipo de Documento
Proceedings Paper
Year published
2000
Publicado
in 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS
Páginas: 445-448 (4)
Conference
23Rd International Semiconductor Conference (Cas 2000), Date: OCT 10-14, 2000, Location: SINAIA, ROMANIA, Patrocinadores: Natl Inst Res & Dev Microtechnologies, Romanian Acad Electrochem Soc Inc, IEEE, Electron Devices Soc, Natl Agcy Sci, Technol & Innovat, IEEE, Romania Sect, Electron Devices Chapter
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Publication Identifiers
Wos: WOS:000168560900089
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