An Orthorhombic Nickel-Nitrogen Complex in High-Pressure Synthetic Diamond

AuthID
P-001-2RR
4
Author(s)
Tipo de Documento
Article
Year published
1999
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 273-4, Páginas: 636-639 (4)
Conference
20Th International Conference on Defects in Semiconductors (Icds-20), Date: JUL 26-30, 1999, Location: BERKELEY, CA, Patrocinadores: Air Force Off Sci Res, Amer Xtal Technol Inc, Appl Mat Inc, Bell Labs Lucent Technol, Hewlett Packard Lab, IBM, Intel Corp, Lawrence Berkeley Natl Lab, Off Naval Res, Sula Technol, Xeeox Palo Alto Res Ctr
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0033313790
Wos: WOS:000084452200149
Source Identifiers
ISSN: 0921-4526
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