Electrical and Photoelectronic Properties of Hexagonal Gan

AuthID
 P-001-2TN
7
Author(s)
Seitz, R
·
Gaspar, C
·
Schon, O
·
Heuken, M
Tipo de Documento
Article
Year published
1999
Publicado
in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, ISSN: 0031-8965
Volume: 176, Número: 1, Páginas: 351-354 (4)
Conference
3Rd International Conference on Nitride Semiconductors (Icns 99), Date: JUL 05-09, 1999, Location: MONTPELLIER, FRANCE, Patrocinadores: ICNS
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Publication Identifiers
SCOPUS: 2-s2.0-0033221834
Wos: WOS:000084032200067
Source Identifiers
ISSN: 0031-8965
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