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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

AuthID
P-001-2TP

Author(s)

Seitz, R

Monteiro, T

Pereira, E

Di Forte Poisson, M

Tipo de Documento

Article

Year published

1999

Publicado

in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, ISSN: 0031-8965

Volume: 176, Número: 1, Páginas: 661-664 (4)

Conference

3Rd International Conference on Nitride Semiconductors (Icns 99), Date: JUL 05-09, 1999, Location: MONTPELLIER, FRANCE, Patrocinadores: ICNS

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Publication Identifiers

DOI: 10.1002/(sici)1521-396x(199911)176:1<661::aid-pssa661>3.3.co;2-9

Wos: WOS:000084032200124

Source Identifiers

ISSN: 0031-8965

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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

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