Accurately Modeling the Drain to Source Current in Recessed Gate P-Hemt Devices

AuthID
 P-001-2YZ
6
Author(s)
Fernandez, T
·
Tazon, A
·
Garcia, JL
Tipo de Documento
Article
Year published
1999
Publicado
in IEEE ELECTRON DEVICE LETTERS, ISSN: 0741-3106
Volume: 20, Número: 11, Páginas: 557-559 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-0343462268
Wos: WOS:000083431700005
Source Identifiers
ISSN: 0741-3106
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