Strain Distribution in Gan Hexagons Measured by Raman Spectroscopy

AuthID
P-001-31B
4
Author(s)
Seitz, R
·
Pereira, E
·
di Forte Poisson, M
Tipo de Documento
Article
Year published
1999
Publicado
in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, ISSN: 0370-1972
Volume: 216, Número: 1, Páginas: 775-778 (4)
Conference
3Rd International Conference on Nitride Semiconductors (Icns 99), Date: JUL 04-09, 1999, Location: MONTPELLIER, FRANCE
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0033243032
Wos: WOS:000084193900147
Source Identifiers
ISSN: 0370-1972
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