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Technology Assessment for the Implementation of Magnetoresistive Elements with Semiconductor Components in Magnetic Random Access Memory (Mram) Architectures.

AuthID
P-001-3EE

Author(s)

Boeve, H

Bruynseraede, C

Das, J

Dessein, K

Borghs, G

De Boeck, J

Sousa, RC

Melo, LV

Freitas, PP

Tipo de Documento

Article

Year published

1999

Publicado

in IEEE TRANSACTIONS ON MAGNETICS, ISSN: 0018-9464

Volume: 35, Número: 5, Páginas: 2820-2825 (6)

Conference

1999 International Magnetics Conference (Intermag 99), Date: MAY 18-21, 1999, Location: KYONGJU, SOUTH KOREA, Patrocinadores: IEEE Magnet Soc

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Publication Identifiers

DOI: 10.1109/20.800992

Wos: WOS:000083151100190

Source Identifiers

ISSN: 0018-9464

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Technology Assessment for the Implementation of Magnetoresistive Elements with Semiconductor Components in Magnetic Random Access Memory (Mram) Architectures.

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Technology Assessment for the Implementation of Magnetoresistive Elements with Semiconductor Components in Magnetic Random Access Memory (Mram) Architectures.

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